UMT1N

UNISONIC TECHNOLOGIES CO., LTD UMT1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMT1N is a dual transistor, including two PNP transistors. It uses UTC’s advanced technology to provide the customers with high DC current gain, etc.  FEATURES * High DC current gain (hFE>120@VCE=-6V, IC=-1mA)  EQUIVALENT CIRCUITS  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UMT1NL-AL6-R UMT1NG-AL6-R Package SOT-363 Pin Assignment Packing 123456 E1 B1 C2 E2 B2 C1 Tape Reel  MARKING 6 54 T1N 12 3 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-025.a UMT1N Preliminary DUAL TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -0.15 A (DC) Collector Power Dissipation Pc 0.15 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector CutOff Current Emitter CutOff Current Collector-Emitter Saturation Voltage DC Current Transfer ...