UG25N45

UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance * Very high pick current capability * Gate drive: 4.5V „ SYMBOL Lead-free: UG25N45L Halogen-free: UG25N45G „ ORDERING INFORMATION Normal UG25N45-TA3-T Ordering Number Lead Free UG25N45L-TA3-T Halogen Free UG25N45G-TA3-T Package TO-220 Pin Assignment 123 GCE Packing Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-037.a UG25N45 Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Current Pulsed Collector Current Power Dissipation @ TC=25°C Junction Temperature Operating Temperature Storage Temperature VCEO VGEO IGEP ICP PD TJ TOPR TSTG 450 ±6 ±8 150 2.5 +150 -55 ~ +150 -55 ~ +150 V V A A W °C °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL θJA MIN TYP MAX 50 UNIT ℃/W „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-E...