UNISONIC TECHNOLOGIES CO., LTD
UG1N120
Preliminary
Insulated Gate Bipolar Transistor
5.3A, 1200V NPT SERIES N-CHANNE...
UNISONIC TECHNOLOGIES CO., LTD
UG1N120
Preliminary
Insulated Gate Bipolar
Transistor
5.3A, 1200V NPT SERIES N-CHANNEL IGBT
DESCRIPTION The UTC UG1N120 is a NPT series N-Channel IGBT, it uses
UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc.
The UTC UG1N120 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc.
FEATURES * Low conduction loss * Short circuit rating
SYMBOL
Collector
1
TO-220
Gate
Emitter
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UG1N120L-TA3-T
UG1N120G-TA3-T
TO-220
Note: Pin Assignment: G: Gate C: Collector E: Emitter
Pin Assignment 123 GCE
Packing Tube
UG1N120L-TA3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
Lot Code
UTC UG1N120
1
L: Lead Free G: Halogen Free
Data Code
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QW-R207-028.a
UG1N120
Preliminary
Insulated Gate Bipolar
Transistor
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Voltage
BV CES
1200
V
Gate to Emitter Voltage Continuous
V GES
±20
V
Gate to Emitter Voltage Pulsed
V GEM
±30
V
Collector Current Continuous
TC=25°C TC=110°C
IC
5.3 A 2.7 A
Collector Current Pulsed (Note 1)
ICM 6 A
Power Dissipation Total at TC=25°C Power Dissipatio...