Document
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines.
Table 1. Product overview
Type number
Package
NXP
MMBZ5V6AL
SOT23
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
JEDEC TO-236AB
Configuration dual common anode
1.2 Features
Unidirectional ESD protection of
ESD protection up to 30 kV (contact
two lines
discharge)
Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD)
Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W Ultra low leakage current: IRM = 5 nA
IEC 61643-321 AEC-Q101 qualified
1.3 Applications
Computers and peripherals Audio and video equipment Cellular handsets and accessories
Automotive electronic control units Portable electronics
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Cd diode capacitance MMBZ5V6AL
f = 1 MHz; VR = 0 V
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Min Typ Max Unit
- - 3V - - 3V - - 4.5 V - - 6V - - 6.5 V - - 8.5 V - - 12 V - - 14.5 V - - 17 V - - 22 V - - 26 V
- 210 280 pF - 175 230 pF - 150 200 pF - 155 200 pF - 130 170 pF - 110 140 pF - 85 105 pF - 70 90 pF - 65 80 pF - 48 60 pF - 45 55 pF
2. Pinning information
Table 3. Pin 1 2 3
Pinning Description cathode (diode 1) cathode (diode 2) common anode
Simplified outline
3
Graphic symbol
3
12
12 006aaa154
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
2 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
3. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
MMBZ5V6AL
-
plastic surface-mounted package; 3 leads
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
4. Marking
Table 5. Marking codes Type number MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] RR* RS* RT* RU* RV* *H1 *H2 *H3 *H4 *H5 *H6
Version SOT23
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
3 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
PPPM
rated peak pulse power MMBZ5V6AL
tp = 10/1000 μs
[1][2]
-
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
-
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
IPPM
rated peak pulse current MMBZ5V6AL
tp = 10/1000 μs
[1][2]
-
MMBZ6V2AL
-
MMBZ6V8AL
-
MMBZ9V1AL
-
MMBZ10VAL
-
MMBZ12VAL
-
MMBZ15VAL
-
MMBZ18VAL
-
MMBZ20VAL
-
MMBZ27VAL
-
MMBZ33VAL
-
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
MMBZxAL series
[3] -
MMBZ5V6AL
[4] -
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
[4] -
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Max Unit 24 W
40 W
3 2.76 2.5 1.7 1.7 2.35 1.9 1.6 1.4 1 0.87
A A A A A A A A A A A
265 mW 290 mW
360 mW
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
4 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−55 −65
Max 150 +150 +150
Unit °C °C °C
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VESD
electrostatic discharge voltage
IEC 61000-4-2 .