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MMBZ6V8AL Dataheets PDF



Part Number MMBZ6V8AL
Manufacturers NXP
Logo NXP
Description Low capacitance unidirectional double ESD protection diodes
Datasheet MMBZ6V8AL DatasheetMMBZ6V8AL Datasheet (PDF)

MMBZxAL series Low capacitance unidirectional double ESD protection diodes Rev. 02 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Type number Pac.

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MMBZxAL series Low capacitance unidirectional double ESD protection diodes Rev. 02 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Type number Package NXP MMBZ5V6AL SOT23 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL JEDEC TO-236AB Configuration dual common anode 1.2 Features „ Unidirectional ESD protection of „ ESD protection up to 30 kV (contact two lines discharge) „ Bidirectional ESD protection of one line „ IEC 61000-4-2; level 4 (ESD) „ Low diode capacitance: Cd ≤ 280 pF „ Rated peak pulse power: PPPM = 40 W „ Ultra low leakage current: IRM = 5 nA „ IEC 61643-321 „ AEC-Q101 qualified 1.3 Applications „ Computers and peripherals „ Audio and video equipment „ Cellular handsets and accessories „ Automotive electronic control units „ Portable electronics NXP Semiconductors MMBZxAL series Low capacitance unidirectional double ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Cd diode capacitance MMBZ5V6AL f = 1 MHz; VR = 0 V MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Min Typ Max Unit - - 3V - - 3V - - 4.5 V - - 6V - - 6.5 V - - 8.5 V - - 12 V - - 14.5 V - - 17 V - - 22 V - - 26 V - 210 280 pF - 175 230 pF - 150 200 pF - 155 200 pF - 130 170 pF - 110 140 pF - 85 105 pF - 70 90 pF - 65 80 pF - 48 60 pF - 45 55 pF 2. Pinning information Table 3. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode Simplified outline 3 Graphic symbol 3 12 12 006aaa154 MMBZXAL_SER_2 Product data sheet Rev. 02 — 10 December 2009 © NXP B.V. 2009. All rights reserved. 2 of 17 NXP Semiconductors MMBZxAL series Low capacitance unidirectional double ESD protection diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description MMBZ5V6AL - plastic surface-mounted package; 3 leads MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 4. Marking Table 5. Marking codes Type number MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] RR* RS* RT* RU* RV* *H1 *H2 *H3 *H4 *H5 *H6 Version SOT23 MMBZXAL_SER_2 Product data sheet Rev. 02 — 10 December 2009 © NXP B.V. 2009. All rights reserved. 3 of 17 NXP Semiconductors MMBZxAL series Low capacitance unidirectional double ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode PPPM rated peak pulse power MMBZ5V6AL tp = 10/1000 μs [1][2] - MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL - MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL IPPM rated peak pulse current MMBZ5V6AL tp = 10/1000 μs [1][2] - MMBZ6V2AL - MMBZ6V8AL - MMBZ9V1AL - MMBZ10VAL - MMBZ12VAL - MMBZ15VAL - MMBZ18VAL - MMBZ20VAL - MMBZ27VAL - MMBZ33VAL - Per device Ptot total power dissipation Tamb ≤ 25 °C MMBZxAL series [3] - MMBZ5V6AL [4] - MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL [4] - MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Max Unit 24 W 40 W 3 2.76 2.5 1.7 1.7 2.35 1.9 1.6 1.4 1 0.87 A A A A A A A A A A A 265 mW 290 mW 360 mW MMBZXAL_SER_2 Product data sheet Rev. 02 — 10 December 2009 © NXP B.V. 2009. All rights reserved. 4 of 17 NXP Semiconductors MMBZxAL series Low capacitance unidirectional double ESD protection diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Tj Tamb Tstg junction temperature ambient temperature storage temperature −55 −65 Max 150 +150 +150 Unit °C °C °C [1] In accordance with IEC 61643-321 (10/1000 μs current waveform). [2] Measured from pin 1 or 2 to pin 3. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VESD electrostatic discharge voltage IEC 61000-4-2 .


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