UTM3023

UNISONIC TECHNOLOGIES CO., LTD UTM3023 N-CHANNEL ENHANCEMENT MODE Power MOSFET  FEATURES * RDS(ON) < 20mΩ @ VGS =10 V, IDS =20 A RDS(ON) < 28mΩ @ VGS =5 V, IDS =10 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTM3023L-TN3-T UTM3023G-TN3-T UTM3023L-TN3-R UTM3023G-TN3-R Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-178.B UTM3023 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 30 ±20 V Maximum Continuous Drain Current Maximum Pulsed Drain Current ID IDM 30 70 A Maximum Power Dissipation PD 62.5 W Maximum Junction Temperature Storage Temperature Range TJ TSTG 150 -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS IGSS VGS =0 V, IDS =250µA VDS =24 V, VGS =0 V VDS =0 V, VGS = ±20V 30 ON CHAR...