P-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UT6401
5.0A, 30V P-CHANNEL ENHANCEMENT MODE
Power MOSFET
DESCRIPTION
The UTC UT6401 i...
Description
UNISONIC TECHNOLOGIES CO., LTD
UT6401
5.0A, 30V P-CHANNEL ENHANCEMENT MODE
Power MOSFET
DESCRIPTION
The UTC UT6401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT6401L-AA3-R
UT6401G-AA3-R
UT6401L-AE3-R
UT6401G-AE3-R
UT6401L-AG6-R
UT6401G-AG6-R
UT6401L-S08-R
UT6401G-S08-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOT-223 SOT-23 SOT-26 SOP-8 S: Source
Pin Assignment 12345678
Packing
G D S - - - - - Tape Reel
G S D - - - - - Tape Reel
D D G S D D - - Tape Reel
S S S G D D D D Tape Reel
www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-151.G
UT6401
MARKING
SOT-223
SOT-26
Power MOSFET
SOT-23
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-151.G
UT6401
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
-30 ±12
V
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 2)
ID IDM
-5 -20
A
SOT-223
1.5
W
Power Dissipation
SOT-23/SOT-26
PD
1
W
SOP-8
1.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratin...
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