UT3N01Z

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS  DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.  FEATURES * RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON) ≤ 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) ≤ 12.8Ω @ VGS=1.5V, ID=10mA * Ultra low gate charge ( typical 5 nC ) * Low reverse transfer capacitance ( CRSS = typical 7.5 pF ) * Fast switching capability * Enhanced ESD capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT3N01ZL-AE2-R UT3N01ZG-AE2-R SOT-23-3 UT3N01ZL-AL3-R UT3N01ZG-AL3-R SOT-323 UT3N01ZL-AN3-R UT3N01ZG-AN3-R SOT-523 UT3N01ZL-AL6-R UT3N01ZG-AL6-R SOT-363 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123456 Packing G S D - - - Tape Reel G S D - - - Tape Reel G S D - - - Tape Reel S1 G1 D2 S2 G2 D1 Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-285.J UT3N01Z  MARKING SOT-23-3 / SOT-323 / SOT-523 Power MOSFET SOT-363 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-285.J UT3N01Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage Drain Current DC Pulse(Note 2) VGSS ID ±10 0.15 0....