BSC0511NDI

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,25V 25VOptiMOS™5PowerMOSFET BSC0511NDI DataSheet Rev.2.0 Final Industrial&Multimarket Dual N-Channel OptiMOS™5 MOSFET Features Product Summary Dual N-channel OptiMOS™ MOSFET Optimized for high performance buck converters Logic level (4.5V rated) VDS RDS(on),max 100% avalanche tested ID Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.5 V Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 VPhase Integrated monolithic Schottky-like diode BSC0511NDI Q1 Q2 25 25 V 2.8 1.0 mW 4.2 1.4 40 40 A Type BSC0511NDI Package PG-TISON-8 Marking 0511NDI Maximum ratings2) at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=70 °C, V GS=10 V T A=25 °C, V GS=4.5 V3) Value Q1 Q2 40 40 19 33 Unit A Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 T A=70 °C, V GS=4.5 V3) I D,pulse E AS V GS P tot T A=25 °C, V GS=10 V4) T C=70 °C Q1: I D=20 A, Q2: I D=20 A, R GS=25 W T A=25 °C2) T A=25 °C, minimum footprint4) T j, T stg Rev.2.0 page 1 15 26 15 26 160 160 12 90 mJ ±16 2.5 2.5 V W 1.0 1.0 -55 ... 150 55/150/56 °C 2015-03-04 Parameter Symbol Conditions BSC0511NDI min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction case The...