Document
BSC040N08NS5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
4.0
mΩ
ID
121
A
Qoss
52
nC
QG(0V..10V)
43
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode BSC040N08NS5
Package PG-TDSON-8
Marking 040N08NS
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2020-05-15
OptiMOSTM5Power-Transistor,80V
BSC040N08NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2020-05-15
OptiMOSTM5Power-Transistor,80V
BSC040N08NS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation
Operating and storage temperature
ID
ID,pulse EAS VGS Ptot
Tj,Tstg
Min.
-
-20 -
-55
Values
Typ. Max.
-
121
-
76
-
19
-
484
-
120
-
20
-
104
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C A VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=50K/W2)
A TC=25°C
mJ ID=50A,RGS=25Ω
V-
W
TC=25°C TA=25°C,RthJA=50K/W2)
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case, bottom
Thermal resistance, junction - case, top
Device on PCB, 6 cm2 cooling area2)
RthJC RthJC RthJA
Values Unit Note/TestCondition
Min. Typ. Max.
-
0.7 1.2 K/W -
-
-
20 K/W -
-
-
50 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2020-05-15
OptiMOSTM5Power-Transistor,80V
BSC040N08NS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance1) Transconductance
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RG gfs
Min. 80 2.2 45
Values
Typ. Max.
-
-
3.0 3.8
0.1 1 10 100
10 100
3.4 4.0 4.8 5.7
1.1 1.7
90 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=67µA
µA
VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=50A VGS=6V,ID=25A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Ciss
Output capacitance1)
Coss
Reverse transfer capacitance1)
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 3000 3900 500 650 24 42
14 -
8
-
25 -
6
-
Unit Note/TestCondition
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1.