BSC026N02KSG

OptiMOS™2 Power-Transistor Features For fast switching converters and sync. rectification Qualified according to JEDEC1) for target applications Super Logic level 2.5V rated; N-channel Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 BSC026N02KS G Product Summary V DS R DS(on),max ID 20 V 2.6 mΩ 100 A PG-TDSON-8 Type BSC026N02KS G Package PG-TDSON-8 Marking 026N02KS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 ID I D,pulse E AS dv /dt V GS V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=2.5 V, T C=25 °C V GS=2.5 V, T C=100 °C V GS=4.5 V, T A=25 °C, R thJA=45 K/W2) T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Rev.1.06 page 1 Value 100 85 100 65 25 200 550 6 ±12 Unit A mJ kV/µs V 2010-07-01 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSC026N02KS G Value 78 2.8 -55 ... 150 55/150/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resi...