2N7002ZDW

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.  FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness Power MOSFET 54 6 1 23 SOT-26 654 1 23 SOT-363  SYMBOL (6) D1 (3) D2 (2) G1 (5) G2 (1) S1 (4) S2  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N7002ZDWL-AG6-R 2N7002ZDWG-AG6-R SOT-26 2N7002ZDWL-AL6-R 2N7002ZDWG-AL6-R SOT-363 Note: Pin Assignment: S: Source G: Gate D: Drain Pin Assignment 123456 S1 G1 D2 S2 G2 D1 S1 G1 D2 S2 G2 D1 Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-540.H 2N7002ZDW  MARKING CPL L: Lead Free G: Halogen Free Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-540.H 2N7002ZDW Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 60 V VGSS ±20 V Drain Current Continuous Pulse(Note 2) ID 300 800 mA Power Dissipation Derating above TA=25°C SOT-26 SOT-363 SOT-26 SOT-363 PD 300 mW 200 mW 2.4 mW/°C 1.6 mW/°C Junction ...