Part Number |
K1315 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1316 |
Datasheet |
K1315 Datasheet (PDF) |
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Symbol VDSS
VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±30 8 32 8 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1315(L)(S), 2SK1316(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
2SK1315 V(BR)DSS 2SK1316
450 500
Gate to source breakdown voltage.