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Part Number K1316
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1316
Datasheet K1316 DatasheetK1316 Datasheet (PDF)

  K1316   K1316
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 8 32 8 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1315(L)(S), 2SK1316(L)(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1315 V(BR)DSS 2SK1316 450 500 Gate to source breakdown voltage.



CPH3459 K1316 K1315


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