Document
QRE1113, QRE1113GR — Minature Reflective Object Sensor
September 2009
QRE1113, QRE1113GR Minature Reflective Object Sensor
Features
■ Phototransistor output ■ No contact surface sensing ■ Miniature package ■ Lead form style: Gull Wing
■ Two leadform options: Through hole (QRE1113) SMT gullwing (QRE1113GR)
■ Two packaging options: Tube (QRE1113) Tape and reel (QRE1113GR)
QRE1113GR Package Dimensions
2.90
2.50
0.60
1.00
0.40
43
1.80
0.94
CL 3.60 3.20
CL
0.94
12
0.40
1.70 1.50
30°
0.61 Nom. (4x)
1.10 0.90
4.80 4.40
Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15mm on all non-nominal dimensions
©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0
www.fairchildsemi.com
QRE1113, QRE1113GR — Minature Reflective Object Sensor
QRE1113 Package Dimensions
4 1.80
2.90 2.50
1.00
CL CL
0.60 0.40 3
0.94
0.94
3.60 3.20
12
4.20 3.80
0.40
1.70 1.50
10.4 8.4
0~20°
0~20°
Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15mm on all non-nominal dimensions
Schematic
12
Pin 1: Anode Pin 2: Cathode
34
Pin 3: Collector Pin 4: Emitter
©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0
2
www.fairchildsemi.com
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOPR TSTG TSOL-I TSOL-F EMITTER
IF VR IFP PD SENSOR
VCEO VECO
IC PD
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3)
Continuous Forward Current Reverse Voltage Peak Forward Current(5) Power Dissipation(1)
Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1)
Rating -40 to +85 -40 to +90 240 for 5 sec 260 for 10 sec
50 5 1 75
30 5 20 50
Units °C °C °C °C
mA V A mW
V V mA mW
Electrical/Optical Characteristics (TA = 25°C unless otherwise specified)
Symbol Parameter
Test Conditions
Min. Typ.
INPUT DIODE
VF Forward Voltage IR Reverse Leakage Current λPE Peak Emission Wavelength OUTPUT TRANSISTOR
IF = 20mA VR = 5V IF = 20mA
1.2 940
ID COUPLED
IC(ON) ICX
VCE (SAT) tr tf
Collector-Emitter Dark Current
On-State Collector Current Cross-Talk Collector Current Saturation Voltage Rise Time Fall Time
IF = 0mA, VCE = 20V
IF = 20mA, VCE = 5V(6) IF = 20mA, VCE = 5V(7)
VCC = 5V, IC(ON) = 100µA, RL = 1kΩ
0.10
0.40
20 20
Notes: 1. Derate power dissipation linearly 1.00mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. Pulse conditions: tp = 100µs; T = 10ms. 6. Measured using an aluminum alloy mirror at d = 1mm. 7. No reflective surface at close proximity.
Max. Units
1.6 V 10 µA
nm
100 nA
mA 1 µA 0.3 V
µs
©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0
3
www.fairchildsemi.com
QRE1113, QRE1113GR — Minature Reflective Object Sensor
IC (ON)- NORMALIZED COLLECTOR CURRENT
Typical Performance Curves
1.0 IF = 10 mA VCE = 5 V TA = 25˚C
0.8
d0
0.6
0.4 Sensing Object: White Paper (90% reflective)
0.2 Mirror
0.0 012345
d-DISTANCE (mm)
Fig. 1 Normalized Collector Current vs. Distance between device and reflector
IC (ON) - NORMALIZED COLLECTOR CURRENT
2.0 d = 1 mm, 90% reflection
1.8 TA = 25˚C
1.6
1.4 IF = 25mA 1.2
IF =20mA 1.0
0.8 IF =15mA
0.6 IF =10mA
0.4 IF =5mA
0.2
0.0 0.1
1 10
VCE - COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Normalized Collector Current vs. Collector to Emitter Voltage
IC (ON) - COLLECTOR CURRENT (mA)
ICEO - NORMALIZED DARK CURRENT
1.0
0.8
0.6
0.4
0.2
0.0 0 4 8 12 16
IF - FORWARD CURRENT (mA)
Fig. 2 Collector Current vs. Forward Current
20
102
Normalized to: VCE = 10 V TA = 25˚C
101
VCE = 10 V VCE = 5 V
100
10-1
10-2 25
40 55 70
TA - Ambient Temperature (˚C)
85
Fig. 4 Collector Emitter Dark Current (Normalized) vs. Ambient Temperature
©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0
4
www.fairchildsemi.com
QRE1113, QRE1113GR — Minature Reflective Object Sensor
IF - FORWARD CURRENT (mA)
Typical Performance Curves (Continued)
50 TA = 25˚C
40
30
20
10
0 1.0 1.1 1.2 1.3 1.4 1.5
VF - FORWARD VOLTAGE (V)
Fig. 6 Forward Current vs. Forward Voltage
VF - FORWARD VOLTAGE (V)
3.0
2.5
2.0
IF = 50 mA 1.5
IF = 20 mA 1.0 IF = 10 mA
0.5
0.0 -40
-20
0
20 40 60 80
TA - AMBIENT TEMPERATURE (˚C)
Fig. 8 Forward Voltage vs. Ambient Temperature
RISE AND FALL TIME (us)
RELATIVE RADIANT INTENSITY
100 VCC = 10 V tpw = 100 us T=1ms TA = 25˚C tf IC = 0.3 mA tr
10 tf IC = 1 mA tr
1 0.1 1 10
RL - LOAD RESISTANC.