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QRE1113GR Dataheets PDF



Part Number QRE1113GR
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Minature Reflective Object Sensor
Datasheet QRE1113GR DatasheetQRE1113GR Datasheet (PDF)

QRE1113, QRE1113GR — Minature Reflective Object Sensor September 2009 QRE1113, QRE1113GR Minature Reflective Object Sensor Features ■ Phototransistor output ■ No contact surface sensing ■ Miniature package ■ Lead form style: Gull Wing ■ Two leadform options: Through hole (QRE1113) SMT gullwing (QRE1113GR) ■ Two packaging options: Tube (QRE1113) Tape and reel (QRE1113GR) QRE1113GR Package Dimensions 2.90 2.50 0.60 1.00 0.40 43 1.80 0.94 CL 3.60 3.20 CL 0.94 12 0.40 1.70 1.50 30° 0..

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QRE1113, QRE1113GR — Minature Reflective Object Sensor September 2009 QRE1113, QRE1113GR Minature Reflective Object Sensor Features ■ Phototransistor output ■ No contact surface sensing ■ Miniature package ■ Lead form style: Gull Wing ■ Two leadform options: Through hole (QRE1113) SMT gullwing (QRE1113GR) ■ Two packaging options: Tube (QRE1113) Tape and reel (QRE1113GR) QRE1113GR Package Dimensions 2.90 2.50 0.60 1.00 0.40 43 1.80 0.94 CL 3.60 3.20 CL 0.94 12 0.40 1.70 1.50 30° 0.61 Nom. (4x) 1.10 0.90 4.80 4.40 Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15mm on all non-nominal dimensions ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 www.fairchildsemi.com QRE1113, QRE1113GR — Minature Reflective Object Sensor QRE1113 Package Dimensions 4 1.80 2.90 2.50 1.00 CL CL 0.60 0.40 3 0.94 0.94 3.60 3.20 12 4.20 3.80 0.40 1.70 1.50 10.4 8.4 0~20° 0~20° Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of ±0.15mm on all non-nominal dimensions Schematic 12 Pin 1: Anode Pin 2: Cathode 34 Pin 3: Collector Pin 4: Emitter ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 2 www.fairchildsemi.com QRE1113, QRE1113GR — Minature Reflective Object Sensor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOPR TSTG TSOL-I TSOL-F EMITTER IF VR IFP PD SENSOR VCEO VECO IC PD Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Peak Forward Current(5) Power Dissipation(1) Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) Rating -40 to +85 -40 to +90 240 for 5 sec 260 for 10 sec 50 5 1 75 30 5 20 50 Units °C °C °C °C mA V A mW V V mA mW Electrical/Optical Characteristics (TA = 25°C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. INPUT DIODE VF Forward Voltage IR Reverse Leakage Current λPE Peak Emission Wavelength OUTPUT TRANSISTOR IF = 20mA VR = 5V IF = 20mA 1.2 940 ID COUPLED IC(ON) ICX VCE (SAT) tr tf Collector-Emitter Dark Current On-State Collector Current Cross-Talk Collector Current Saturation Voltage Rise Time Fall Time IF = 0mA, VCE = 20V IF = 20mA, VCE = 5V(6) IF = 20mA, VCE = 5V(7) VCC = 5V, IC(ON) = 100µA, RL = 1kΩ 0.10 0.40 20 20 Notes: 1. Derate power dissipation linearly 1.00mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. Pulse conditions: tp = 100µs; T = 10ms. 6. Measured using an aluminum alloy mirror at d = 1mm. 7. No reflective surface at close proximity. Max. Units 1.6 V 10 µA nm 100 nA mA 1 µA 0.3 V µs ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 3 www.fairchildsemi.com QRE1113, QRE1113GR — Minature Reflective Object Sensor IC (ON)- NORMALIZED COLLECTOR CURRENT Typical Performance Curves 1.0 IF = 10 mA VCE = 5 V TA = 25˚C 0.8 d0 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 Mirror 0.0 012345 d-DISTANCE (mm) Fig. 1 Normalized Collector Current vs. Distance between device and reflector IC (ON) - NORMALIZED COLLECTOR CURRENT 2.0 d = 1 mm, 90% reflection 1.8 TA = 25˚C 1.6 1.4 IF = 25mA 1.2 IF =20mA 1.0 0.8 IF =15mA 0.6 IF =10mA 0.4 IF =5mA 0.2 0.0 0.1 1 10 VCE - COLLECTOR EMITTER VOLTAGE (V) Fig. 3 Normalized Collector Current vs. Collector to Emitter Voltage IC (ON) - COLLECTOR CURRENT (mA) ICEO - NORMALIZED DARK CURRENT 1.0 0.8 0.6 0.4 0.2 0.0 0 4 8 12 16 IF - FORWARD CURRENT (mA) Fig. 2 Collector Current vs. Forward Current 20 102 Normalized to: VCE = 10 V TA = 25˚C 101 VCE = 10 V VCE = 5 V 100 10-1 10-2 25 40 55 70 TA - Ambient Temperature (˚C) 85 Fig. 4 Collector Emitter Dark Current (Normalized) vs. Ambient Temperature ©2002 Fairchild Semiconductor Corporation QRE1113, QRE1113GR Rev. 1.6.0 4 www.fairchildsemi.com QRE1113, QRE1113GR — Minature Reflective Object Sensor IF - FORWARD CURRENT (mA) Typical Performance Curves (Continued) 50 TA = 25˚C 40 30 20 10 0 1.0 1.1 1.2 1.3 1.4 1.5 VF - FORWARD VOLTAGE (V) Fig. 6 Forward Current vs. Forward Voltage VF - FORWARD VOLTAGE (V) 3.0 2.5 2.0 IF = 50 mA 1.5 IF = 20 mA 1.0 IF = 10 mA 0.5 0.0 -40 -20 0 20 40 60 80 TA - AMBIENT TEMPERATURE (˚C) Fig. 8 Forward Voltage vs. Ambient Temperature RISE AND FALL TIME (us) RELATIVE RADIANT INTENSITY 100 VCC = 10 V tpw = 100 us T=1ms TA = 25˚C tf IC = 0.3 mA tr 10 tf IC = 1 mA tr 1 0.1 1 10 RL - LOAD RESISTANC.


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