4N90

UNISONIC TECHNOLOGIES CO., LTD 4N90 4A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 4N90 is particularly applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) < 4.2Ω @ VGS=10V, ID=2.0A * High switching speed * 100% avalanche tested * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N90L-TA3-T 4N90G-TA3-T 4N90L-TF3-T 4N90G-TF3-T 4N90L-TF1-T 4N90G-TF1-T 4N90L-TF2-T 4N90G-TF2-T 4N90L-TF3T-T 4N90G-TF3T-T 4N90L-TM3-T 4N90G-TM3-T 4N90L-TN3-R 4N90G-TN3-R 4N90L-T3N-T 4N90G-T3N-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-252 TO-3PN Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-479.G 4N90  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-479.G 4N90 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage ...