K2586

2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID*2 I *1 D(pulse) I DR* 2 I AP * 3 EAR* 3 Pch*2 Tch Tstg Ratings 60 ±20 60 240 60 45 174 125 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK2586 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.0 — — Forward transfer admittance |yfs| Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 35 — — — — — — — — — Typ Max Unit ...