Thermally-Enhanced High Power RF LDMOS FET
PXFC192207FH
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207FH is a...
Description
PXFC192207FH
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
30
1930 MHz
25 1960 MHz
1990 MHz
20
Gain
15
60 50 40 30
10 20
5
0 30
10
Efficiency
35 40 45
c192207fh_g1
50
0 55
Output Power (dBm)
PXFC192207FH Package H-37288G-4/2
Features
Broadband input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V,
16 µs pulse width, 10 % duty cycle, class AB - Output power at P1dB = 220 W...
Similar Datasheet