4N65K-MK

UNISONIC TECHNOLOGIES CO., LTD 4N65K-MK Preliminary 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-MK is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.1Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65KL-TF3-T 4N65KG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-014.a 4N65K-MK Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 650 V VGSS ±30 V Avalanche Current (Note2) Drain Current Continuous Pulsed (Note2) Avalanche Energy Single Pulsed (Note3) Repetitive (Note2) Power Dissipation Derate above 25°C IAR ID IDM EAS EAR PD 4.4 4.0 16 50 10.6 36 0.288 A A A mJ mJ W W/°C Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns Junction Temperature Operating Temperature TJ TOPR +1...