N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N60K-MT
Preliminary
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60K-MT...
Description
UNISONIC TECHNOLOGIES CO., LTD
4N60K-MT
Preliminary
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-B30.F
4N60K-MT
Preliminary
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60KL-TA3-T
4N60KG-TA3-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TF1-T
4N60KG-TF1-T
4N60KL-TF2-T
4N60KG-TF2-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TM3-T
4N60KG-TM3-T
4N60KL-TMS-T
4N60KG-TMS-T
4N60KL-TMS2-T
4N60KG-TMS2-T
4N60KL-TMS4-T
4N60KG-TMS4-T
4N60KL-TN3-R
4N60KG-TN3-R
4N60KL-TND-R
4N60KG-TND-R
4N60KL-T2Q-T
4N60KG-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262
Power MOSFET
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube...
Similar Datasheet