30N06V-Q

UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.  FEATURES * RDS(ON) < 40mΩ@VGS = 10 V, ID=15A * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 30N06VL-TM3-T 30N06VG-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate to Source Voltage VDSS VGSS 60 V ±20 V Continuous Drain Current TC = 25°C TC = 100°C ID 30 A 21.3 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Power Dissipation IDM EAS EAR PD 120 A 250 mJ 8 mJ 46 W Junction Temperature Operation Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could b...