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30N06-Q Dataheets PDF



Part Number 30N06-Q
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 30N06-Q Datasheet30N06-Q Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.  FEATURES * RDS(ON) = 40mΩ@VGS = 10 V, ID=15A *.

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UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.  FEATURES * RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability  SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO- 252  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 30N06L-TA3-T 30N06G-TA3-T TO-220 30N06L-TF1-T 30N06G-TF1-T TO-220F1 30N06L-TF2-T 30N06G-TF2-T TO-220F2 30N06L-TF3-T 30N06G-TF3-T TO-220F 30N06L-TM3-T 30N06G-TM3-T TO-251 30N06L-TN3-T 30N06G-TN3-T TO-252 30N06L-TN3-R 30N06G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-979. A 30N06-Q Power MOSFET  ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate to Source Voltage VDSS VGSS 60 V ±20 V Continuous Drain Current TC = 25°C TC = 100°C ID 30 A 21.3 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) TO-220 IDM EAS EAR 120 A 250 mJ 8 mJ 79 Power Dissipation TO-220F/ TO-220F2 TO-220F1 PD 45 W TO-251/TO-252 46 Junction Temperature Operation Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C  THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F/ TO-220F2 TO-220F1 TO-251/TO-252 TO-220 Junction to Case TO-220F/ TO-220F2 TO-220F1 TO-251/TO-252 SYMBOL θJA θJC RATING 62 62.5 110 1.9 2.7 2.85 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-979. A 30N06-Q Power MOSFET  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V Gate-Source Leakage Current Forward Reverse IGSS VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25°C 60 V 10 μA 100 nA -100 nA 0.06 V/°C ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS = VGS, ID = 250 μA VGS = 10 V, ID = 15 A 2.0 4.0 V 26 40 mΩ DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS = 0 V, VDS = 25 V, f = 1MHz 900 pF 250 pF 85 pF SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 30V, ID =15 A, VGS=10V (Note 1, 2) VDS = 60V, VGS = 10 V, ID = 24A (Note 1, 2) 50 100 160 100 20 30 6 9 ns ns ns ns nC nC nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A Maximum Continuous Drain-Source Diode Forward Current IS 1.4 V 30 A Maximum Pulsed Drain-Source Diode Forward Current ISM Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. 120 A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-979. A 30N06-Q  TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + - + VDS - L RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-979. A 30N06-Q  TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Switching Test Circuit Switching Waveforms Same Type 50kΩ as D.U.T. 12V 0.2μF 0.3μF 10V QG VGS VDS QGS QGD 1mA DUT VG Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO..


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