Document
UNISONIC TECHNOLOGIES CO., LTD
30N06-Q
Power MOSFET
60V, 30A N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.
FEATURES
* RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability
SYMBOL
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-220F2
1 TO-251
1 TO- 252
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L-TN3-R
30N06G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tube Tape Reel
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-979. A
30N06-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate to Source Voltage
VDSS VGSS
60 V ±20 V
Continuous Drain Current
TC = 25°C TC = 100°C
ID
30 A 21.3 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
TO-220
IDM EAS EAR
120 A 250 mJ
8 mJ 79
Power Dissipation
TO-220F/ TO-220F2 TO-220F1
PD
45 W
TO-251/TO-252
46
Junction Temperature Operation Temperature
TJ TOPR
+150 -55 ~ +150
°C °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/ TO-220F2 TO-220F1
TO-251/TO-252
TO-220
Junction to Case
TO-220F/ TO-220F2 TO-220F1
TO-251/TO-252
SYMBOL θJA
θJC
RATING 62
62.5
110 1.9
2.7
2.85
UNIT °C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-979. A
30N06-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate-Source Leakage Current
Forward Reverse
IGSS
VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V
Breakdown Voltage Temperature Coefficient
△BVDSS/△TJ
ID =250μA, Referenced to 25°C
60 V 10 μA 100 nA -100 nA
0.06 V/°C
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance
VGS(TH) RDS(ON)
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 15 A
2.0 4.0 V 26 40 mΩ
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS = 0 V, VDS = 25 V, f = 1MHz
900 pF 250 pF 85 pF
SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tR
tD(OFF) tF QG
QGS QGD
VDD = 30V, ID =15 A, VGS=10V (Note 1, 2)
VDS = 60V, VGS = 10 V, ID = 24A (Note 1, 2)
50 100 160 100 20 30
6 9
ns ns ns ns nC nC nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 30A
Maximum Continuous Drain-Source Diode Forward Current
IS
1.4 V 30 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
120 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-979. A
30N06-Q
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ -
+ VDS -
L
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-979. A
30N06-Q
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Same Type
50kΩ
as D.U.T.
12V 0.2μF
0.3μF
10V
QG
VGS
VDS
QGS
QGD
1mA
DUT
VG
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO..