1N50-KW

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 10Ω @ VGS=10V, ID=0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N50L-T92-B 1N50G-T92-B 1N50L-T92-K 1N50G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-92 TO-92 Pin Assignment 123 GDS GDS Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-053.b 1N50-KW Preliminary Power MOSFET ■ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 500 V VGSS ±30 V Continuous Drain Current Avalanche Energy Single Pulsed (Note 2) ID EAS 1A 50 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TA=25°С) PD 0.6 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °С °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. ...