Document
UNISONIC TECHNOLOGIES CO., LTD
13N40K-MT
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 13N40K-MT is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
FEATURES
* RDS(ON) < 0.35Ω @ VGS = 10 V, ID = 6.5 A * High switching speed * 100% avalanche tested
SYMBOL
1 TO-220
1
11 TO-220F1
TO-220F TO-220F2
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13N40KL-TA3-T
13N40KG-TA3-T
13N40KL-TF3-T
13N40KG-TF3-T
13N40KL-TF1-T
13N40KG-TF1-T
13N40KL-TF2-T
13N40KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F2
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tube Tube
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage Drain Current Avalanche Energy
Continuous (TC=25°C) Pulsed (Note 2) Single Pulsed (Note 3)
VGSS ID IDM EAS
±30 V 13 A 52 A 507 mJ
TO-220
143 W
Power Dissipation
TO-220F/TO-220F1 TO-220F2 TO-220
PD
34 W 1.14 W/°C
Derate above 25°C
TO-220F/TO-220F1 TO-220F2
0.272
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 6mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. ISD≤13A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL θJA
θJC
RATINGS 62.5 0.87
3.58
UNIT °С/W °С/W
°С/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
ID=250µA, VGS=0V VDS=400V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=6.5A
DYNAMIC PARAMETERS
Input Capacitance Output Capacitance
CISS COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
QG QGS QGD
VDS= 50V, VGS= 10V, ID= 0.3A, ID=100µA (Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time Turn-OFF Delay Time
tR tD(OFF)
VDS= 30V, VGS= 10V, ID = 0.3A, RG = 25Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=13A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
400 V 1 µA
+100 nA -100 nA
2.0 4.0 V 0.29 0.35 Ω
775 165 11.5
pF pF pF
32 100 9.4 12 8.3 55 64 87 160 89
nC nC nC ns ns ns ns
1.4 V 13 A 52 A
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TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ -
+ VDS -
L
Power MOSFET
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10% VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG QGD
Gate Charge Test Circuit
Charge Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS IAS
VDD
ID(t) tp
VDS(t) Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power .