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13N40K-MT Dataheets PDF



Part Number 13N40K-MT
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 13N40K-MT Datasheet13N40K-MT Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 13N40K-MT is universally applied in electro.

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UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 13N40K-MT is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.  FEATURES * RDS(ON) < 0.35Ω @ VGS = 10 V, ID = 6.5 A * High switching speed * 100% avalanche tested  SYMBOL 1 TO-220 1 11 TO-220F1 TO-220F TO-220F2  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13N40KL-TA3-T 13N40KG-TA3-T 13N40KL-TF3-T 13N40KG-TF3-T 13N40KL-TF1-T 13N40KG-TF1-T 13N40KL-TF2-T 13N40KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tube www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-B08.d 13N40K-MT  MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-B08.d 13N40K-MT Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage Drain Current Avalanche Energy Continuous (TC=25°C) Pulsed (Note 2) Single Pulsed (Note 3) VGSS ID IDM EAS ±30 V 13 A 52 A 507 mJ TO-220 143 W Power Dissipation TO-220F/TO-220F1 TO-220F2 TO-220 PD 34 W 1.14 W/°C Derate above 25°C TO-220F/TO-220F1 TO-220F2 0.272 W/°C Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 6mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. ISD≤13A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C  THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F/TO-220F1 TO-220F2 SYMBOL θJA θJC RATINGS 62.5 0.87 3.58 UNIT °С/W °С/W °С/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-B08.d 13N40K-MT Preliminary Power MOSFET  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=400V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.5A DYNAMIC PARAMETERS Input Capacitance Output Capacitance CISS COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge Gate-Source Charge Gate-Drain Charge QG QGS QGD VDS= 50V, VGS= 10V, ID= 0.3A, ID=100µA (Note 1, 2) Turn-ON Delay Time tD(ON) Rise Time Turn-OFF Delay Time tR tD(OFF) VDS= 30V, VGS= 10V, ID = 0.3A, RG = 25Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=13A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 400 V 1 µA +100 nA -100 nA 2.0 4.0 V 0.29 0.35 Ω 775 165 11.5 pF pF pF 32 100 9.4 12 8.3 55 64 87 160 89 nC nC nC ns ns ns ns 1.4 V 13 A 52 A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-B08.d 13N40K-MT Preliminary  TEST CIRCUITS AND WAVEFORMS D.U.T. + - + VDS - L Power MOSFET RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-B08.d 13N40K-MT Preliminary  TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% Power MOSFET Switching Test Circuit 10% VGS tD(ON) tR tD(OFF) tF Switching Waveforms VGS 10V QGS QG QGD Gate Charge Test Circuit Charge Gate Charge Waveform Unclamped Inductive Switching Test Circuit BVDSS IAS VDD ID(t) tp VDS(t) Time Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-B08.d 13N40K-MT Preliminary Power .


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