11NM40

UNISONIC TECHNOLOGIES CO., LTD 11NM40 Preliminary 11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM40 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) < 0.38Ω @ VGS=10V, ID=5.7A * High switching speed * Low effective output capacitance (Typ.=95pF) * Low gate charge (Typ.=40nC)  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM40L-TF3-T 11NM40G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A38.b 11NM40 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage Drain Current Continuous TC=25°C TC=100°C Pulsed (Note 1) VGSS ID IDM ±30 11.6 7 33 V A A A Avalanche Current (Note 1) Single Pulsed Avalanche Energy (Note 2) IAR EAS 11 A 154 mJ Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) EAR dv/dt 12.5 mJ 4.5 V/ns Total Power Dissipation TC=25°C Derate above 25°C PD 125 W 1.0 W/°C O...