PESD12VS2UT

DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UT series Double ESD protection diodes in SOT23 package Product data sheet Supersedes data of 2003 Aug 20 2004 Apr 15 NXP Semiconductors Double ESD protection diodes in SOT23 package Product data sheet PESDxS2UT series FEATURES Uni-directional ESD protection of up to two lines Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A Ultra-low reverse leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. APPLICATIONS Computers and peripherals Communication systems Audio and video equipment High speed data lines Parallel ports. QUICK REFERENCE DATA SYMBOL PARAMETER VALUE UNIT VRWM reverse stand-off 3.3, 5.2, 12, 15 V voltage and 24 Cd diode capacitance 207, 152, 38, 32 pF VR = 0 V; and 23 f = 1 MHz number of protected lines 2 PINNING PIN 1 2 3 DESCRIPTION cathode 1 cathode 2 common anode DESCRIPTION Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT MARKING CODE(1) *U9 *U1 *U2 *U3 *U4 Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 1 31 3 22 001aaa490 sym022 Fig.1 Simplified outline (SOT23) and symbol. 2004 Apr 15 2 NXP Semic...