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PESD5V0U4BW Dataheets PDF



Part Number PESD5V0U4BW
Manufacturers NXP
Logo NXP
Description Ultra low capacitance bidirectional quadruple ESD protection arrays
Datasheet PESD5V0U4BW DatasheetPESD5V0U4BW Datasheet (PDF)

PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays Rev. 01 — 15 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD5V0U4B.

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PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays Rev. 01 — 15 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD5V0U4BF SOT886 PESD5V0U4BW SOT665 JEDEC MO-252 - Package configuration leadless ultra small ultra small and flat lead 1.2 Features I Bidirectional ESD protection of up to I ESD protection up to 10 kV four lines I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection I FireWire I High-speed data lines NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 2.9 3.5 pF 2. Pinning information Table 3. Pinning Pin Description PESD5V0U4BF 1 cathode (diode 1) 2 common cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 common cathode 6 cathode (diode 4) PESD5V0U4BW 1 cathode (diode 1) 2 common cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) Simplified outline Graphic symbol 123 65 bottom view 4 16 25 34 006aab333 54 123 15 2 34 006aab334 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5V0U4BF XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm PESD5V0U4BW - plastic surface-mounted package; 5 leads SOT665 PESD5V0U4BF_PESD5V0U4BW_1 Product data sheet Rev. 01 — 15 August 2008 © NXP B.V. 2008. All rights reserved. 2 of 12 NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays 4. Marking Table 5. Marking codes Type number PESD5V0U4BF PESD5V0U4BW Marking code B1 A6 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per device Tj Tamb Tstg junction temperature ambient temperature storage temperature −55 −65 Max Unit 150 +150 +150 °C °C °C Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Per diode VESD electrostatic discharge voltage PESD5V0U4BF PESD5V0U4BW PESD5V0U4BF PESD5V0U4BW Conditions IEC 61000-4-2 (contact discharge) IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] Measured from pin 1, 3, 4 or 5 to pin 2. Min Max Unit [1] [2] [3] [2] [3] - 10 kV 10 kV 8 kV 8 kV PESD5V0U4BF_PESD5V0U4BW_1 Product data sheet Rev. 01 — 15 August 2008 © NXP B.V. 2008. All rights reserved. 3 of 12 NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays Table 8. ESD standards compliance Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IPP 100 % 90 % 001aaa631 10 % tr = 0.7 ns to 1 ns 30 ns 60 ns Fig 1. ESD pulse waveform according to IEC 61000-4-2 t PESD5V0U4BF_PESD5V0U4BW_1 Product data sheet Rev. 01 — 15 August 2008 © NXP B.V. 2008. All rights reserved. 4 of 12 NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD protection arrays 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage IRM reverse leakage current VRWM = 5 V VBR breakdown voltage IR = 5 mA Cd diode capacitance f = 1 MHz VR = 0 V VR = 5 V rdif differential resistance IR = 1 mA Min Typ Max Unit - - 5V - 5 100 nA 5.5 6.5 9.5 V - 2.9 3.5 pF - 1.9 - pF - - 100 Ω 3.0 Cd (pF) 2.6 006aab036 2.2 1.8 012345 VR (V) Fig 2. f = 1 MHz; Tamb = 25 °C Diode capacitance as a function of reverse voltage; typical values IPP −VCL −VBR −VRWM IR IRM −IRM −IR VRWM VBR VCL − −IPP + 006aaa676 Fig 3. V-I characteristics for a bidirectional ESD protection diode PESD5V0U4BF_PESD5V0U4BW_1 Product data sheet Rev. 01 — 15 August 2008 © NXP B.V. 2008. All rights reserved. 5 of 12 NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW Ultra low capacitance bidirectional quadruple ESD pro.


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