Document
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
Rev. 01 — 15 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0U4BF
SOT886
PESD5V0U4BW
SOT665
JEDEC MO-252 -
Package configuration
leadless ultra small ultra small and flat lead
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV four lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals I Audio and video equipment
I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I Communication systems
I Portable electronics I Subscriber Identity Module (SIM) card
protection I FireWire I High-speed data lines
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V - 2.9 3.5 pF
2. Pinning information
Table 3. Pinning Pin Description PESD5V0U4BF 1 cathode (diode 1) 2 common cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 common cathode 6 cathode (diode 4)
PESD5V0U4BW 1 cathode (diode 1) 2 common cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4)
Simplified outline
Graphic symbol
123
65 bottom view
4
16 25 34
006aab333
54 123
15 2 34
006aab334
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
Version
PESD5V0U4BF XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm
PESD5V0U4BW -
plastic surface-mounted package; 5 leads
SOT665
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
2 of 12
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
4. Marking
Table 5. Marking codes Type number PESD5V0U4BF PESD5V0U4BW
Marking code B1 A6
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−55 −65
Max Unit
150 +150 +150
°C °C °C
Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage PESD5V0U4BF
PESD5V0U4BW
PESD5V0U4BF
PESD5V0U4BW
Conditions
IEC 61000-4-2 (contact discharge) IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) MIL-STD-883 (human body model)
[1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] Measured from pin 1, 3, 4 or 5 to pin 2.
Min Max Unit
[1]
[2] [3] [2] [3] -
10 kV 10 kV 8 kV 8 kV
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
3 of 12
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
Table 8. ESD standards compliance Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact) > 4 kV
IPP 100 % 90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns 30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
t
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
4 of 12
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
6. Characteristics
Table 9. Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
IRM reverse leakage current VRWM = 5 V
VBR breakdown voltage IR = 5 mA
Cd
diode capacitance
f = 1 MHz
VR = 0 V
VR = 5 V
rdif differential resistance IR = 1 mA
Min Typ Max Unit
- - 5V
- 5 100 nA 5.5 6.5 9.5 V
- 2.9 3.5 pF - 1.9 - pF - - 100 Ω
3.0
Cd (pF)
2.6
006aab036
2.2
1.8 012345 VR (V)
Fig 2.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse voltage; typical values
IPP
−VCL −VBR −VRWM
IR IRM
−IRM −IR
VRWM VBR VCL
− −IPP
+ 006aaa676
Fig 3. V-I characteristics for a bidirectional ESD protection diode
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
5 of 12
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD pro.