Ultra low capacitance bidirectional quadruple ESD protection arrays
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
Rev. 01 — 15 August 2008
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Description
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
Rev. 01 — 15 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0U4BF
SOT886
PESD5V0U4BW
SOT665
JEDEC MO-252 -
Package configuration
leadless ultra small ultra small and flat lead
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV four lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals I Audio and video equipment
I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I Communication systems
I Portable electronics I Subscriber Identity Module (SIM) card
protection I FireWire I High-speed data lines
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V - 2.9 3.5 pF
2. Pinning inform...
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