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PESD5V0U2BM Dataheets PDF



Part Number PESD5V0U2BM
Manufacturers NXP
Logo NXP
Description Ultra low capacitance bidirectional double ESD protection array
Datasheet PESD5V0U2BM DatasheetPESD5V0U2BM Datasheet (PDF)

BOTTOM VIEW PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array Rev. 01 — 14 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features I Bidirectional ESD protecti.

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BOTTOM VIEW PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array Rev. 01 — 14 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features I Bidirectional ESD protection of up to I ESD protection up to 10 kV two lines I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection I FireWire I High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 2.9 3.5 pF NXP Semiconductors PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common cathode Simplified outline 1 3 2 Transparent top view Graphic symbol 1 3 2 006aab331 3. Ordering information Table 3. Ordering information Type number Package Name Description PESD5V0U2BM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm Version SOT883 4. Marking Table 4. Marking codes Type number PESD5V0U2BM Marking code GA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per device Tj Tamb Tstg junction temperature ambient temperature storage temperature −55 −65 Max Unit 150 +150 +150 °C °C °C PESD5V0U2BM_1 Product data sheet Rev. 01 — 14 August 2008 © NXP B.V. 2008. All rights reserved. 2 of 11 NXP Semiconductors PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Per diode VESD electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 or 3 to pin 2 or 3. Min Max Unit [1][2] - - 10 kV 8 kV Table 7. ESD standards compliance Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IPP 100 % 90 % 001aaa631 10 % tr = 0.7 ns to 1 ns 30 ns 60 ns Fig 1. ESD pulse waveform according to IEC 61000-4-2 t PESD5V0U2BM_1 Product data sheet Rev. 01 — 14 August 2008 © NXP B.V. 2008. All ri.


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