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PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
Rev. 01 — 14 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV two lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals I Audio and video equipment
I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I Communication systems
I Portable electronics I Subscriber Identity Module (SIM) card
protection I FireWire I High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V - 2.9 3.5 pF
NXP Semiconductors
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description cathode (diode 1) cathode (diode 2) common cathode
Simplified outline
1 3
2 Transparent top view
Graphic symbol
1 3
2 006aab331
3. Ordering information
Table 3. Ordering information Type number Package
Name Description PESD5V0U2BM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
Version SOT883
4. Marking
Table 4. Marking codes Type number PESD5V0U2BM
Marking code GA
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−55 −65
Max Unit
150 +150 +150
°C °C °C
PESD5V0U2BM_1
Product data sheet
Rev. 01 — 14 August 2008
© NXP B.V. 2008. All rights reserved.
2 of 11
NXP Semiconductors
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model)
[1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 or 3 to pin 2 or 3.
Min Max Unit
[1][2]
-
-
10 kV 8 kV
Table 7. ESD standards compliance Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact) > 4 kV
IPP 100 % 90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns 30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
t
PESD5V0U2BM_1
Product data sheet
Rev. 01 — 14 August 2008
© NXP B.V. 2008. All ri.