UF1010E

UNISONIC TECHNOLOGIES CO., LTD UF1010E N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS(ON), fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers.  FEATURES * RDS(ON)<12 mΩ @VGS=10V * Ultra low gate charge :130 nC * Low CRSS = 140 pF(typ. ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability * High ruggedness 1 TO-220 1 TO-220F2 1 TO-220F1 1 TO-263  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T UF1010EL-TF2-T UF1010EG-TF2-T UF1010EL-TQ2-T UF1010EG-TQ2-T UF1010EL-TQ2-R UF1010EG-TQ2-R Package TO-220 TO-220F1 TO-220F2 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-306.D UF1010E Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage Drain Current Continuous (VGS=10V) Pulsed (Note 2) Avalanche Current (Note 2) Avalanche Energy Repetitive (Note 2) Single Pulsed (Note3) Power Dissipation TO-220/TO-263 (TC=25°C) TO-220F1/ TO-220F2 VGSS ID IDM IAR EAR EAS PD ±20 84 330 50 17 1180 200 54 V A A mJ mJ W Junction Temperature T...