IRF135B203

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   G Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant, Halogen-Free StrongIRFET™ IRF135B203 IRF135S203 HEXFET® Power MOSFET D VDSS 135V RDS(on) typ. max 6.7m 8.4m IS D (Silicon Limited) 129A GDS TO-220AB IRF135B203 D S G D2-Pak IRF135S203 G Gate D Drain S Source Base part number IRF135B201 IRF135S201 Package Type TO-220 D2-Pak Standard Pack Form Quantity Tube 50 Tape and Reel 800 Orderable Part Number IRF135B203 IRF135S203 RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 ID = 77A TJ = 125°C TJ = 25°C 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On– Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback June 17, 2015   IRF135B203/IRF135S203 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Conti...