IPB017N10N5
MOSFET
OptiMOSª5Power-Transistor,100V
Features
•Idealforhighfrequencyswitchingandsync.rec. •Ex...
IPB017N10N5
MOSFET
OptiMOSª5Power-
Transistor,100V
Features
Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
1.7
mΩ
ID 273 A
Qoss 213 nC
QG(0V..10V)
168
nC
D²-PAK7pin
1 7
tab
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPB017N10N5
Package PG-TO 263-7
Marking 017N10N5
RelatedLinks -
Final Data Sheet
1 Rev.2.5,2019-11-13
OptiMOSª5Power-
Transistor,100V
IPB017N10N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characterist...