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3N40

Unisonic Technologies

N-Channel Power MOSFET

3N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 3A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 3...


Unisonic Technologies

3N40

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Description
3N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 3A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 3N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.  FEATURES * RDS(ON)<2.0Ω @ VGS=10V, ID=1.5A * High switching speed * 100% avalanche tested  SYMBOL 2.Drain 1 TO-220F 1 TO-252 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N40L-TF3-T 3N40G-TF3-T 3N40L-TN3-R 3N40G-TN3-R 3N40L-TND-R 3N40G-TND-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-252 TO-252D Pin Assignment 123 GDS GDS GDS Packing Tube Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-553.d 3N40 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 400 V VGSS ±30 V Drain Current Continuous (TC=25°C) Pulsed (Note 2) ID IDM 3A 12 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 290 mJ 3 mJ Power Dissipation Derate above...




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