N-Channel Power MOSFET
3N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
3A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 3...
Description
3N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
3A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 3N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
FEATURES
* RDS(ON)<2.0Ω @ VGS=10V, ID=1.5A * High switching speed * 100% avalanche tested
SYMBOL
2.Drain
1
TO-220F
1
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3N40L-TF3-T
3N40G-TF3-T
3N40L-TN3-R
3N40G-TN3-R
3N40L-TND-R
3N40G-TND-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F TO-252 TO-252D
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tape Reel Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-553.d
3N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS 400 V VGSS ±30 V
Drain Current
Continuous (TC=25°C) Pulsed (Note 2)
ID IDM
3A 12 A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
EAS EAR
290 mJ 3 mJ
Power Dissipation Derate above...
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