BTA25H-600CW3G

BTA25H-600CW3G, BTA25H-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS at 95°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 500 V/ms minimum at 150°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package − Internally Isolated High Commutating dI/dt − 4.0 A/ms minimum at 150°C Internally Isolated (2500 VRMS) These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 150°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA25H−600CW3G BTA25H−800CW3G VDRM, VRRM 600 800 V On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C) IT(RMS) 25 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) ITSM I2t 250 A 260 A2sec Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms) VDSM/ VRSM VDRM/VRRM +100 V Peak Gate Current (TJ = 150°C, t ≤ 20 ms) IGM 4.0 A Average Gate Power (TJ = 150°C) PG(AV) 0.5 W Operating Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −40 to +150 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V Stresses exceeding Maximum Ratings may ...