INSULATED GATE BIPOLAR TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
• Low VCE (on) Non Punc...
INSULATED GATE BIPOLAR
TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.
C
G E
n-channel
VCES = 600V IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
TO-220AB
D2Pak
IRGB6B60K IRGS6B60K
TO-262 IRGSL6B60K
Max. 600 13 7.0 26 26 ± 20 90 36 -55 to +150
300 (0.063 in. (1.6mm) from case)
Units V A
V W
°C
Thermal Resistance
RθJC RθCS RθJA RθJA Wt
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Parameter Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min. ––– ––– ––– ––– –––
Typ. ––– 0.50 ––– ––– 1.44
Max. 1.4 ––– 62 40 –––
Units °C/W
g
1 11/18/04
IRGB/S/SL6B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter...