IRGSL4B60KD1PbF

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings TO-220 D2Pak TO-262 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Parameter Max. Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current cICM Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Storage Temperature Range, for 10 sec. Thermal / Mechanical Characteristics 600 11 7.6 22 22 11 6.7 22 ±20 63 31 -55 to +175 300 (0.063 in. (1.6mm) from case) V A V W °C Parameter Min. Typ. Max. Units RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT ––– ––– 2.4 °C/W Junctio...