IRGB4715DPbF

  VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 8A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C G E n-channel G CE IRGS4715DPbF  D2‐Pak  E C G IRGB4715DPbF  TO‐220AB  G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number IRGB4715DPbF IRGS4715DPbF TO-220 D2-Pak Form Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 800 800 IRGB4715DPbF IRGS4715DPbF IRGS4715DTRLPbF IRGS4715DTRRPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Op...