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IRGS30B60KPBF

International Rectifier

Insulated Gate Bipolar Transistor


Description
PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features Low VCE (on) Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive VCE (on) Temperature Coefficient Maximum Junction Temperature rated at 175°C Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C t...



International Rectifier

IRGS30B60KPBF

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