IRGPS60B120KDP

PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Super-247 Package. Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.50V @ VGE = 15V, ICE = 60A, Tj=25°C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Thermal Resistance RθJC RθJC RθCS RθJA Wt Le Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package) www.irf.com Super-247™ Max...