IRGP6650DPBF

  VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 35A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6650DPbF  TO‐247AC  C Collector GCE IRGP6650D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6650DPbF IRGP6650D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6650DPbF IRGP6650D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Diode Repetitive Peak Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage M...