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F59D4G161A
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
Description
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) ...
Elite Semiconductor
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F59D4G161A
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
- Elite Semiconductor
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