Low-leakage diode
DISCRETE SEMICONDUCTORS
DATA SHEET
BAS416 Low-leakage diode
Product data sheet Supersedes data of 2002 Nov 19
2004 Jan...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
BAS416 Low-leakage diode
Product data sheet Supersedes data of 2002 Nov 19
2004 Jan 26
NXP Semiconductors
Low-leakage diode
Product data sheet
BAS416
FEATURES Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA.
APPLICATIONS Low-leakage current applications in surface mounted
circuits.
DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package.
PINNING
PIN 1 2
DESCRIPTION cathode anode
handbook, halfp1age
2
MAM406
Marking code: D4. The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) (SC-76) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BAS416
NAME −
PACKAGE DESCRIPTION plastic surface mounted package; 2 leads
VERSION SOD323
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VRRM VR IF IFRM IFSM
Ptot Tstg Tj
PARAMETER
CONDITIONS
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2
repetitive peak forward current
non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
total power dissipation storage temperature
Tamb = 25 °C; note 1
junction temperature
Note 1. Device mounted on an FR4 printed-circuit board.
MIN. − − − −
MAX....
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