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FDD9409_F085 Dataheets PDF



Part Number FDD9409_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDD9409_F085 DatasheetFDD9409_F085 Datasheet (PDF)

FDD9409_F085 N-Channel PowerTrench® MOSFET May 2014 FDD9409_F085 N-Channel PowerTrench® MOSFET 40 V, 90 A, 3.2 mΩ D Features „ Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems .

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FDD9409_F085 N-Channel PowerTrench® MOSFET May 2014 FDD9409_F085 N-Channel PowerTrench® MOSFET 40 V, 90 A, 3.2 mΩ D Features „ Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems D G G S DTO-P-2A5K2 (TO-252) S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single-Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 90 See Figure 4 101 150 1 -55 to + 175 1 52 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device Package FDD9409 FDD9409_F085 D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 2: 3: rmRSatoθtaiJunrAtngintiipsgnrgteThsJseeu=nsruft2aem5cd°eCohfoe, tfrLheteh=isej0ubd.n1arcmastiieonHdn,p-oItiAnonSs-cm.=aosR4ue4θnAaJtiCn,ndVgisDcoaDgnsu=aea-r41tao0ni-Vnate2mdepubdariidebnnygotfditnh2edeosurzimgccntaoolwrprcpheheislaeris.rtgRainnθgJcAeaiswndhdeeVrtDeeDrtmh=ein0ceVadsdbeuytrhitnhegermtuimasleerrei'snfebareovnaaclradendicsehdseei.gfnin.edThaes the solder maximum ©2014 Fairchild Semiconductor Corporation FDD9409_F085 Rev. C4 1 www.fairchildsemi.com FDD9409_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. Symbol Parameter Off Characteristics Test Conditions Min. BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS=40V, TJ = 25oC VGS = 0V TJ = 175oC(Note 4) VGS = ±20V 40 - VGS(th) RDS(on) Gate-to-Source Threshold Voltage Drain-to-Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250μA ID = 80A, TJ = 25oC VGS= 10V TJ = 175oC(Note 4) 2.0 - Ciss Coss Crss Rg Qg(ToT) Qg(th) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 80A - Typ. - 3.2 2.3 4.1 3130 756 48 2 42 6 16 7.7 Max. Units 1 1 ±100 V μA mA nA 4.0 V 3.2 mΩ 5.7 mΩ - pF - pF - pF -Ω 46 nC 7 nC - nC - nC Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Rise Time Turn-Off Delay Fall Time Turn-Off Time Drain-Source Diode Characteristics VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω -- 23 - 22 - 41 - 15 -- VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V IF = 80A, dISD/dt = 100A/μs, VDD=32V --- 54 - 42 Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. 72 76 1.25 1.2 73 61 ns ns ns ns ns ns V V ns nC FDD9409_F085 Rev. C4 2 www.fairchildsemi.com FDD9409_F085 N-Channel PowerTrench® MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER ID, DRAIN CURRENT (A) 1.2 200 CURRENT LIMITED VGS = 10V 1.0 BY PACKAGE 160 CURRENT LIMITED 0.8 BY SILICON 120 0.6 80 0.4 0.2 40 0.0 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs. Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 NORMALIZED THERMAL IMPEDANCE, ZθJC SINGLE PULSE 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs. Case Temperature PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 101 1000 VGS = 10V IDM, PEAK CURRENT (A) 100 10 SINGLE PULSE 1 10-5 10-4 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability FDD9409_F085 Rev. C4 3 www.fairchildsemi.com FDD9409_F085 N-Channel PowerTrench® MOSFET Typical Characteristics ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1ms 10ms 100ms 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe .


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