Document
FDD9409_F085 N-Channel PowerTrench® MOSFET
May 2014
FDD9409_F085
N-Channel PowerTrench® MOSFET
40 V, 90 A, 3.2 mΩ
D
Features
Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems
D G
G S
DTO-P-2A5K2 (TO-252)
S
For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single-Pulse Avalanche Energy
PD
Power Dissipation Derate Above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 40 ±20 90
See Figure 4 101 150 1
-55 to + 175 1 52
Units V V
A
mJ W W/oC oC oC/W oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDD9409
FDD9409_F085 D-PAK(TO-252)
Reel Size 13”
Tape Width 12mm
Quantity 2500 units
Notes:
1: Current is limited by bondwire configuration.
2: 3:
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the solder maximum
©2014 Fairchild Semiconductor Corporation FDD9409_F085 Rev. C4
1
www.fairchildsemi.com
FDD9409_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min.
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=40V, TJ = 25oC
VGS = 0V
TJ = 175oC(Note 4)
VGS = ±20V
40 -
VGS(th) RDS(on)
Gate-to-Source Threshold Voltage Drain-to-Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A,
TJ = 25oC
VGS= 10V TJ = 175oC(Note 4)
2.0 -
Ciss Coss Crss Rg Qg(ToT) Qg(th) Qgs Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain “Miller“ Charge
VDS = 25V, VGS = 0V, f = 1MHz
f = 1MHz
VGS = 0 to 10V VGS = 0 to 2V
VDD = 20V ID = 80A
-
Typ.
-
3.2 2.3 4.1
3130 756 48
2 42 6 16 7.7
Max. Units
1 1 ±100
V μA mA nA
4.0 V 3.2 mΩ 5.7 mΩ
- pF - pF - pF -Ω 46 nC 7 nC - nC - nC
Switching Characteristics
ton td(on) tr td(off) tf toff
Turn-On Time Turn-On Delay Rise Time Turn-Off Delay Fall Time Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω
-- 23 - 22 - 41 - 15 --
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time Qrr Reverse-Recovery Charge
ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs, VDD=32V
--- 54 - 42
Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
72 76
1.25 1.2 73 61
ns ns ns ns ns ns
V V ns nC
FDD9409_F085 Rev. C4
2
www.fairchildsemi.com
FDD9409_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
ID, DRAIN CURRENT (A)
1.2 200
CURRENT LIMITED
VGS = 10V
1.0
BY PACKAGE 160
CURRENT LIMITED
0.8 BY SILICON
120
0.6
80 0.4
0.2 40
0.0 0
25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case Temperature
2 DUTY CYCLE - DESCENDING ORDER
1
D = 0.50 0.20 0.10 0.05 0.02
0.1 0.01
NORMALIZED THERMAL IMPEDANCE, ZθJC
SINGLE PULSE
0 25
50 75 100 125 150 175 200 TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs. Case Temperature
PDM
t1 t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC
0.01 10-5
10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
1000
VGS = 10V
IDM, PEAK CURRENT (A)
100
10
SINGLE PULSE
1
10-5
10-4
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC 150
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD9409_F085 Rev. C4
3
www.fairchildsemi.com
FDD9409_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
ID, DRAIN CURRENT (A)
1000
100
100us 10
OPERATION IN THIS
AREA MAY BE LIMITED BY rDS(on)
1
SINGLE PULSE TJ = MAX RATED
TC = 25oC
0.1
1ms 10ms 100ms
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe .