FDD86540

FDD86540 N-Channel PowerTrench® MOSFET FDD86540 N-Channel PowerTrench® MOSFET 60 V, 136 A, 4.1 mΩ March 2015 Features General Description „ Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A „ Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch D D G S DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 60 ±20 136 86 21.5 240 228 127 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 0.98 (Note 1a) 40 °C/W Device Marking FDD86540 Device FDD86540 Package D-PAK...