FDD86250

FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET FDD86250 April 2015 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 51 A, 22 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC - DC Conversion D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 150 ±20 51 27 8 164 180 132 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information 0.94 (Note 1a) 40 °C/W Device Marking FDD86250 Device FDD86250 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2010 Fairchild ...