FDB86360_F085

FDB86360_F085 N-Channel Power Trench® MOSFET FDB86360_F085 N-Channel Power Trench® MOSFET 80V, 110A, 1.8mΩ January 2014 DD Features „ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 80 ±20 110 See Figure4 1167 333 2.22 -55 to + 175 0.45 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking FDB86360 Device FDB86360_F085 Package D2-PAK(TO-263) Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 32pm:r:oeRuSsnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan0ui.nnm5c7potimiuonnnsHt-.i,tnoRIgA-cθSoaJn=sCea6is4a1Angi...