FDB86135

FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ May 2013 Features Shielded Gate MOSFET Technology Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications DC-DC primary bridge DC-DC Synchronous rectification Hot swap D D GS D2-PAK FDB Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - Continuous( Package Limited) - Continuous - Pulsed Single Pulsed Avalanche Energy Power Dissipation - TC = 25oC - TA = 25oC Operating and Storage Temperature Range TC = 25oC TC = 25oC TC = 25oC(Note 1a) (Note 3) (Note 1a) (Note 1b) S Ratings 100 ±20 176 120 75 704 658 227 2.4 -55 to +175 Units V V A A mJ W W/oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDB86135 D...