N-Channel MOSFET
FCP36N60N / FCPF36N60NT — N-Channel SupreMOS® MOSFET
FCP36N60N / FCPF36N60NT
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90...
Description
FCP36N60N / FCPF36N60NT — N-Channel SupreMOS® MOSFET
FCP36N60N / FCPF36N60NT
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90 mΩ
December 2013
Features
RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A Ultra Low Gate Charge (Typ. Qg = 86 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF) 100% Avalanche Tested RoHS Compliant
Application
Solar Inverter AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS VGSS
ID
IDM EAS IAR EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1) (Note 2) (Note 1) (Note 1)
(Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum...
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