N-Channel MOSFET
FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET
FCP104N60F
N-Channel SuperFET® ll FRFET® MOSFET
600 V, 37 A, 104 mΩ
...
Description
FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET
FCP104N60F
N-Channel SuperFET® ll FRFET® MOSFET
600 V, 37 A, 104 mΩ
December 2014
Features
650 V @ TJ = 150°C Typ. RDS(on) = 91 mΩ Ultra Low Gate Charge (Typ. Qg = 110 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 313 pF) 100% Avalanche Tested
Applications
Lighting
Solar Inverter AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET® II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
D
GDS TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Drain Current
- DC
- AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt Power Dissipation
(TC = 2...
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