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FCMT199N60
N-Channel SuperFET II MOSFET
Description
FCMT199N60 — N-Channel SuperFET® II MOSFET August 2014 FCMT199N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features 650 V @ TJ = 150°C RDS(on) = 170 mΩ (Typ.) Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) 100% Avalanche Tested RoHS Compliant Applications Server and Telecom Powe...
Fairchild Semiconductor
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FCMT199N60
N-Channel SuperFET II MOSFET
- Fairchild Semiconductor
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