FCH070N60E

FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH070N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 52 A, 70 mΩ April 2015 Features 650 V @ TJ = 150°C Typ. RDS(on) = 58 mΩ Ultra Low Gate Charge (Typ. Qg = 128 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF) 100% Avalanche Tested RoHS Compliant Applications Telecom / Sever Power Supplies Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. D G D S TO-247 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recover...